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| inchange semiconductor product specification silicon npn power transistors tip31/31a/31b/31c description ? ? with to-220c package ? complement to type tip32/32a/32b/32c applications ? medium power linear switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit tip31 40 tip31a 60 TIP31B 80 v cbo collector-base voltage tip31c open emitter 100 v tip31 40 tip31a 60 TIP31B 80 v ceo collector-emitter voltage tip31c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-pulse 5 a i b base current 1 a t c =25 ?? 40 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors tip31/31a/31b/31c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip31 40 tip31a 60 TIP31B 80 v ceo(sus) collector-emitter sustaining voltage tip31c i c =30ma; i b =0 100 v v cesat collector-emitter saturation voltage i c =3a i b =0.375a 1.2 v v be base-emitter on voltage i c =3a ; v ce =4v 1.8 v tip31 v ce =40v; v eb =0 tip31a v ce =60v; v eb =0 TIP31B v ce =80v; v eb =0 i ces collector cut-off current tip31c v ce =100v; v eb =0 0.2 ma tip31/31a v ce =30v; i b =0 i ceo collector cut-off current TIP31B/31c v ce =60v; i b =0 0.3 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =4v 25 h fe-2 dc current gain i c =3a ; v ce =4v 10 50 f t transiton frequency i c =0.5a ; v ce =10v 3 mhz inchange semiconductor product specification 3 silicon npn power transistors tip31/31a/31b/31c package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon npn power transistors tip31/31a/31b/31c |
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